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  200 0 sensitron semiconductor 221 west industry court deer park, ny 11729 - 4681 phone (631) 586 - 7600 fax (631) 242 - 9798 www.sensitron.com sales@sensitron.com sensitron semiconductor technical data data sheet 777, rev. b silicon schottky rectifier very low forward voltage drop features: soft reverse recovery at low and high temperature very low forward voltage drop low power loss, high efficiency high surge capacity guard ring for enhanced durability and long term reliability guaranteed reverse avalanche characteristics maximum ratings characteristics symbol condition max. units peak inverse voltage v rwm - 45 v max. average forward current i f(av) 50% duty cycle, rectangular wave form (single) 15 a max. average forward current i f(av) 50% duty cycle, rectangular wave form (common cathode) 30 a max. peak one cycle non - repetitive surge current i fsm 8.3 ms, half sin e wave (per leg) 200 a non - repetitive avalanche energy e as t j = 25 c, i as = 3.0 a, l = 4.4 mh (per leg) 20 mj repetitive avalanche current i ar i as decay linearly to 0 in 1 s limited by t j max v a =1.5v r 3.0 a maximum thermal resistance r jc (single) 2.65 c/w max. junction temperature t j - - 65 to +175 c max. storage temperature t stg - - 65 to +175 c electrical characteristics characteristics symbol condition max. units max. forward voltage drop v f1 @ 15a, pulse, t j = 25 c 0.73 v (per leg) v f2 @ 15a, pulse, t j = 125 c 0.66 v max. reverse current i r1 @v r = 45v, pulse, t j = 25 c 0.4 ma (per leg) i r2 @v r = 45v, pulse, t j = 125 c 15 ma max. junction capacitance (per leg) c t @v r = 5v, t c = 25 c f sig = 1mhz, v sig = 5 0mv (p - p) 800 pf SHD119222 SHD119222p
200 0 sensitron semiconductor 221 west industry court deer park, ny 11729 - 4681 phone (631) 586 - 7600 fax (631) 242 - 9798 www.sensitron.com sales@sensitron.com sensitron technical data data sheet 777, rev. b single common cathode 1 2 3 2 1 3 pinout table device type pin 1 pin 2 pin 3 single rectifier cathode anode anode common cathode common cathode anode 1 anode 2 note: the v f curves shown are for the sd125sb45 unpackaged die only. SHD119222 SHD119222p mechanical dimensions: in inches / mm lcc - 3p 0.2 0.3 0.4 0.5 0.6 0.7 0.8 forward voltage drop - v f (v) 10 0 10 1 instantaneous forward current - i f (a) typical forward characteristics 125 c 175 c 25 c 0 10 20 30 40 50 reverse voltage - v r (v) 10 -3 10 -2 10 -1 10 0 10 1 10 2 instantaneous reverse current - i r (ma) typical reverse characteristics 25 c 50 c 75 c 100 c 125 c 150 c 175 c 0 10 20 30 40 50 reverse voltage - v r (v) 200 300 400 500 600 700 800 junction capacitance - c t (pf) typical junction capacitance .145 (3.68) .450 (11.43) .140 (3.56)typ. .035 (.89) min. .050 (1.27) .375 (9.53) .037 (.94) .625 (15.88) .415 (10.54) .157 (3.99) .030 (.76) min. 1 2 3
200 0 sensitron semiconductor 221 west industry court deer park, ny 11729 - 4681 phone (631) 586 - 7600 fax (631) 242 - 9798 www.sensitron.com sales@sensitron.com sens itron technical data data sheet 777, rev. b disclaimer: 1 - the information given herein, including the specifications and dimensions, is subject to change without prior notice to impro ve product characteris tics. before ordering, purchasers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2 - in cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail - safe precautions or other arrangement . 3 - in no event shall sensitron s emiconductor be liable for any damages that may result from an accident or any other cause during operation of the users units according to the datasheet(s). sensitron semiconductor assumes no responsibility for any intellectual proper ty claims or any oth er problems that may result from applications of information, products or circuits described in the datasheets. 4 - in no event shall sensitron semiconductor be liable for any failure in a semiconductor device or any secondary damage resulti ng from use at a value exceeding the absolute maximum rating. 5 - no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6 - the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of sensitron semiconductor. 7 - the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applicat ion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulat ions. SHD119222 SHD119222p


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